GMB624 Datasheet, PDF (2/2 Pages) Guilin Strong Micro-Electronics Co., Ltd. – PNP Low Frequency Amplifier Transistor

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMB624
■ELECTRICAL CHARACTERISTICS 電特性
(TA=25℃ unless otherwise noted 如無特殊說明,溫度爲 25℃)
Characteristic
特性參數
Symbol Test Condition Min Typ Max Unit
符號 測試條件 最小值 典型值 最大值 單位
Collector Cutoff Current
集電極截止電流
ICBO
VCB=-30V,
IE=0
—
— -0.1 μA
Emitter Cutoff Current
發射極截止電流
IEBO
VEB=-5V,
IC=0
—
— -0.1 μA
Collector-Base Breakdown Voltage
集電極-基極擊穿電壓
V(BR)CBO IC=-100μA
-30
—
—
V
Collector-Emitter Breakdown Voltage
集電極-發射極擊穿電壓
V(BR)CEO IC=-1.0mA
-25
—
—
V
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓
V(BR)EBO IE=-100μA
-5
—
—
V
DC Current Gain
直流電流增益
HFE1
VCE=-1V,
IC=-100mA
110
200
400
—
DC Current Gain
直流電流增益
HFE2
VCE=-1V,
IC=-700mA
50
—
—
—
Collector-Emitter Saturation Voltage
集電極-發射極飽和壓降
VCE(sat)
IC=-700mA,
IB=-70mA
—
-0.25 -0.6
V
Base-Emitter Saturation Voltage
基極-發射極飽和壓降
Base-Emitter Saturation
基極-發射極電壓
Transition Frequency
特徵頻率
Collector Output Capacitance
輸出電容
VBE(sat)
IC=-700mA,
IB=-70mA
—
-1.0 -1.2
V
VBE
VCE=-6V,
IC=-10mA
-0.6 -0.64 -0.7
V
fT
VCE=-6V,
IC=-10mA
—
160
— MHz
Cob
VCB=-6V,IE=0,
f=1MHz
—
17
—
pF