GMA92 Datasheet, PDF (2/3 Pages) GTM CORPORATION – PNP PITAXIAL PLANAR TRANSISTOR

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMA92 GMA93
■ELECTRICAL CHARACTERISTICS 電特性
(T_A=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)
Characteristic
特性參數
Symbol
Min
符號 最小值
Collector-Emitter Breakdown Voltage(3)
集電極-發射極擊穿電壓(Ic=-1.0mAdc,I_B=0)
V_(BR)CEO
GMA92
GMA93
-300
-200
Collector-Base Breakdown Voltage
V_(BR)CBO
集電極-基極擊穿電壓(Ic=-100μAdc,I_E=0)
GMA92
GMA93
-300
-200
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓(I_E=-10μAdc,Ic=0)
V_(BR)EBO
-5.0
Emitter Cutoff Current 發射截止電流
(V_EB=-3.0Vdc,I_c=0)
Collector Cutoff Current 集電極截止電流
(V_CB=-200Vdc,I_E=0)
(V_CB=-160Vdc,I_E=0)
I_EBO
__
I_CBO
GMA92
—
GMA93
__
DC Current Gain 直流電流增益
H_FE
(I_c=-1.0mAdc,V_CE=-10.0Vdc)
25
(I_c=-10mAdc,V_CE=-10.0Vdc)
40
(I_c=-30mAdc,V_CE=-10.0Vdc)
GMA92
25
GMA93
25
Collector-Emitter Saturation Voltage
集電極-發射極飽和壓降
(I_c=-20mAdc, I_B=-2.0mAdc)
V_CE(sat)
GMA92
—
GMA93
—
Base-Emitter Saturation Voltage
基極-發射極飽和壓降
(I_c=-20mAdc, I_B=-2.0mAdc)
Current-Gain-Bandwidth Product
電流增益-帶寬乘積
V_BE(sat)
—
(I_c=-10mAdc,V_CE=-20Vdc,f=100MHz)
Collector-Base Capacitance 輸出電容
(V_CB=-20.0Vdc, I_E=0, f=1.0MHz)
f_T
50
C_cb
GMA92
—
GMA93
__
１．FR-5=1.0×0.75×0.062in.
２．Alumina=0.4×0.3×0.024in.99.5%alumina.
３．Pulse Width<300us;Duty Cycle<2.0%.
Max
最大值
—
—
—
__
—
-100
-250
-250
—
300
—
__
-0.5
-0.5
-0.9
__
6.0
8.0
Unit
單位
Vdc
Vdc
Vdc
nAdc
nAdc
—
Vdc
Vdc
MHz
pF