GMA1504 Datasheet, PDF (2/2 Pages) Guilin Strong Micro-Electronics Co., Ltd. – PNP General Purpose Transistor

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMA1504
■ELECTRICAL CHARACTERISTICS 電特性
(TA=25℃ unless otherwise noted 如無特殊說明,溫度爲 25℃)
Characteristic
特性參數
Symbol Test Condition Min Typ Max Unit
符號 測試條件 最小值 典型值 最大值 單位
Collector Cutoff Current
集電極截止電流
Emitter Cutoff Current
發射極截止電流
ICBO
VCB=-50V,
IE=0
—
IEBO
VEB=-5V,
IC=0
—
— -0.1 μA
— -0.1 μA
Collector-Base Breakdown Voltage
集電極-基極擊穿電壓
V(BR)CBO IC=-100μA
-50
—
—
V
Collector-Emitter Breakdown Voltage
集電極-發射極擊穿電壓
V(BR)CEO IC=-1.0mA
-50
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓
V(BR)EBO IE=-100μA
-5
DC Current Gain
直流電流增益
HFE
VCE=-6V,
IC=-2mA
70
Collector-Emitter Saturation Voltage
集電極-發射極飽和壓降
VCE(sat)
IC=-100mA,
IB=-10mA
—
Base-Emitter Saturation Voltage
基極-發射極飽和壓降
Noise Figure
噪声係數
Transition Frequency
特徵頻率
VBE(sat)
IC=-100mA,
IB=-10mA
—
V _CE=-6V,
NF
Ic=-0.1mA,
f=1kHz,
—
Rg=10kΩ
fT
VCE=-10V,
IC=-1mA
80
Collector Output Capacitance
輸出電容
VCB=-10V,
Cob
IE=0,
—
f=1MHz
—
—
V
—
—
V
— 400 —
-0.1 -0.3 V
— -1.0 V
1.0 10 dB
—
— MHz
4.0 7.0 pF