GMA1037AK_15 Datasheet, PDF (2/2 Pages) Guilin Strong Micro-Electronics Co., Ltd. – PNP General Purpose Transistor

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMA1037AK
■ELECTRICAL CHARACTERISTICS 電特性
(TA=25℃ unless otherwise noted 如無特殊說明,溫度爲 25℃)
Characteristic
特性參數
Symbol Test Condition Min Typ Max Unit
符號 測試條件 最小值 典型值 最大值 單位
Collector Cutoff Current
集電極截止電流
Emitter Cutoff Current
發射極截止電流
ICBO
VCB=-60V,
IE=0
—
IEBO
VEB=-6V,
IC=0
—
— -0.1 μA
— -0.1 μA
Collector-Base Breakdown Voltage
集電極-基極擊穿電壓
V(BR)CBO
IC=-50μA
-60
—
—
V
Collector-Emitter Breakdown Voltage
集電極-發射極擊穿電壓
V(BR)CEO IC=-1.0mA
-50
—
—
V
Emitter-Base Breakdown Votlage
發射極-基極擊穿電壓
V(BR)EBO IE=-50μA
-6
—
—
V
DC Current Gain
直流電流增益
HFE
VCE=-6V,
IC=-1mA
120
—
560 —
Collector-Emitter Saturation Voltage
集電極-發射極飽和壓降
VCE(sat)
IC=-50mA,
IB=-5mA
—
Base-Emitter Saturation Voltage
基極-發射極飽和壓降
Transition Frequency
特徵頻率
Collector Output Capacitance
輸出電容
VBE(sat)
IC=-100mA,
IB=-10mA
—
VCE=-12V,
fT
IC=-2mA,
—
f=100MHz
VCB=-12V,
Cob
IE=0A,
—
f=1MHz
— -0.5 V
— -1.0 V
140 — MHz
4.0 5.0 pF