GMA06 Datasheet, PDF(2/3 Page) GTM CORPORATION

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GMA06 Datasheet, PDF (2/3 Pages) GTM CORPORATION – NPN SILICON TRANSISTOR

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Guilin Strong Micro-Electronics Co.,Ltd.

GMA06

â ELECTRICAL CHARACRTERISTICS é»ç¹æ§

(TA=25â unless otherwise noted å¦ç¡ç¹æ®èªªæï¼æº«åº¦ç² 25â)

Characteristic

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Symbol Test Condition Min. Typ. Max. Unit

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æ¸¬è©¦æ¢ä»¶ æå°å¼ å¸åå¼ æå¤§å¼ å®ä½

Collector Cutoff Current

éé»æ¥µæªæ¢é»æµ

Collector Emitter Current

éé»æ¥µç¼å°æ¥µé»æµ

ICBO

VCB=80V,IE=0

ICES

VCE=60V, VBE=0

0.1 Î¼A

Collect-Base Breakdown Voltage

éé»æ¥µ-åºæ¥µæç©¿é»å£

V(BR)CBO

IC=100Î¼A

Collect-Base Breakdown Voltage

éé»æ¥µ-åºæ¥µæç©¿é»å£

V(BR)CEO

IC=1.0mA

Emitter-Base Breakdown Voltage

ç¼å°æ¥µ-åºæ¥µæç©¿é»å£

V(BR)EBO

IE=100Î¼A

DC Current Gain

ç´æµé»æµå¢ç

hFE(1) VCE=1V,IC=10mA 100

hFE(2) VCE=1V,IC=100mA 100

Collector-Emitter Saturation Voltage

éé»æ¥µ-ç¼å°æ¥µé£½åå£é

VCE(sat)

IC=100mA,

IB=10mA

Base-Emitter Saturation Voltage

åºæ¥µ-ç¼å°æ¥µé»å£

VBE VCE=1V,IC=100mA â

Transition Frequency

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VCE=2V,IC=10mA 100

0.25 V

1.2

â MHz

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