GM9018_15 Datasheet, PDF (2/2 Pages) Guilin Strong Micro-Electronics Co., Ltd. – PNP General Purpose Transistor

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM9018(销售型號 S9018)
■DEVICE MARKING 打標
GM9018(S9018)=J8
■ELECTRICAL CHARACTERISTICS 電特性
(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)
Characteristic
特性參數
Symbol
符號
Min
Typ
最小值 典型值
Emitter Cutoff Current
發射極截止電流(V_EB=3.0v,IC=0)
I_EBO
—
—
Collector Cutoff Current
集電極截止電流(V_CB=20v,IE=0)
I_CBO
—
—
Collector-Base Breakdown Voltage
集電極基極擊穿電壓(Ic=100uA)
V(BR)CBO
30
—
Collector-Emitter Breakdown Voltage
集電極發射極擊穿電壓(Ic=1mA)
V(BR)CEO
20
—
Emitter-Base Breakdown Voltage
發射極基極擊穿電壓(IE=100uA)
V(BR)EBO
4
—
Collector Saturation Voltage
集電極飽和壓降(Ic=10mAdc,I_B=1mA)
V_CE(sat)
—
—
Base Saturation Voltage
基極飽和壓降(Ic=10mAdc,I_B=1mA)
V_BE(sat)
—
—
DC Current Gain 直流電流增益
(V_CE=5.0v,IC=1.0mA)
HFE
40
—
Gain Bandwidth Product
增益帶寬乘積(V_CE=5.0v,IC=10mA)
f_T
600
800
Noise Figure 噪声係數
(V CE=6V,Ic=0.1mA,f=1kHz,Rg=10kΩ)
NF
—
—
Output Capacitance 輸出電容
(V_CB=10v,IE=0,f=1.0MHz)
C_ob
—
1.2
Max
最大值
0.5
0.5
—
—
—
0.6
1.4
200
1100
1.0
1.5
Unit
單位
μA
μA
V
V
V
V
V
MHz
dB
pF
1. FR-5=1.0×0.75×0.062in.
2. Alumina=0.4×0.3×0.024in.99.5%alumina.