GM8550_15 Datasheet, PDF (2/2 Pages) Guilin Strong Micro-Electronics Co., Ltd. – PNP Low Frequency Power Amplifier

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM8550
■ELECTRICAL CHARACTERISTICS 電特性
(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)
Characteristic
特性參數
Collector Cutoff Current
集電極截止電流
Emitter Cutoff Current
發射極截止電流
Symbol
符號
ICBO
IEBO
Collector-Base Breakdown Voltage
集電極-基極擊穿電壓
V(BR)CBO
Collector-Emitter Breakdown Voltage
集電極-發射極擊穿電壓
V(BR)CEO
Test Condition
測試條件
VCB=-30V,IE=0
VEB=-5V,IC=0
IC=-100μA
(GMA6801)
IC=-10mA
(GMA6801)
Min. Typ. Max. Unit
最小值 典型值 最大值 單位
—
—
-0.1 μA
—
—
-40
(-25)
—
-25
—
(-18)
-0.1 μA
—
V
—
V
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓
V(BR)EBO
IE=-100μA
-5
—
—
V
DC Current Gain
直流電流增益
HFE(1)
VCE=-1V,IC=-50(S8550/A)mA
VCE=-1V,IC=-100mA
85
—
400
VCE=-1V,
HFE(2)
IC=-1800mA(GMA6801)
IC=-800mA
(SS8550,MMT8550，M8550)
50
—
40
—
—
Ic=-500mA(S8550)
40
Ic=-500mA(S8550A)
30
IC=-500mA, IB=-50mA(S8550/A)
IC=-1000mA, IB=-100mA(M8550)
Collector-Emitter Saturation Voltage
集電極-發射極飽和壓降
VCE(sat)
IC=-1200mA, IB=-120mA(MMT8550)
IC=-1500mA, IB=-150mA(SS8550)
—
IC=-1000mA, IB=-100mA(GMA6801)
-0.6
-0.6
—
-0.6 V
-0.6
-0.3
IC=-500mA, IB=-50mA(S8550/A)
Base-Emitter Saturation Voltage
基極-發射極飽和壓降
IC=-1000mA, IB=-100mA(M8550)
VBE(sat) I_C=-1200mA, I_B=-120mA(MMT8550)
—
IC=-1500mA, IB=-150mA(SS8550)
-1
-1.2 V
Base-Emitter Voltage
基極-發射極電壓
IC=-1800mA, IB=-180mA(GMA6801)
VBE
VCE=-1V,IC=-10mA
—
-0.8 -1.0 V
Transition Frequency
特徵頻率
fT
VCE=-5V,IC=-10mA
100
120
— MHz
Collector Output Capacitance
輸出電容
Cob
VCB=-10V,IE=0,f=1MHz
—
13
30
pF