GM807 Datasheet, PDF (2/2 Pages) Guilin Strong Micro-Electronics Co., Ltd. – PNP Low Frequency Amplifier Transistor

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM807(销售型號 BC807)
■ELECTRICAL CHARACTERISTICS 電特性
(T_A=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)
Characteristic 特性參數
Symbol 符號 Min 最小值
■OFF CHARACTERISTICS 截止電特性
Collector-Emitter Breakdown Voltage
集電極發射極擊穿電壓
V_(BR)CEO
-45
(Ic= -10mAdc,I_B=0)
Collector-Base Breakdown Voltage
集電極基極擊穿電壓
V_(BR)CBS
-50
(Ic= -10uAdc,V_EB=0)
Emitter-Base Breakdown Voltage
發射極基極擊穿電壓
V_(BR)EBO
-5.0
(I_E= -1.0uAdc,Ic=0)
Collector Cutoff Current
集電極截止電流(V_CB=-20v)
I_CBO
—
(V_CB= -20V,TA=150℃)
—
■ON CHARCTERISTICS 導通電特性
DC Current Gain 直流電流增益
(I_c= -100mA,V_CE= -1.0V)
HFE
807-16
100
807-25
160
807-40
250
(I_c= -500mA,V_CE= -1.0V)
40
Collector-Emitter Saturation Voltage 集 電 極 -
發射極飽和壓降(Ic= -500mA, IB= -50mA)
V_CE(sat)
—
Base-Emitter Saturation Voltage 基極-發射極
飽和壓降(Ic= -500mA, IB= -50mA)
V_BE(sat)
—
Base-Emitter Voltage 基極-發射極電壓
(I_c= -500mA, VCE= -1.0V)
VBE(on)
—
■SMALL-SIGNAL CHARACTERISTICS 小信號特性
Current-Gain-Bandwidth Product
電流增益-帶寬乘積
fT
100
(I_c= -10mA,V_CE= -5.0V,f=100MHz)
Output Capacitance
輸出電容(V_CB= -10V, f=1.0MHz)
Cobo
—
1. FR-5=1.0×0.75×0.062in.
2. Alumina=0.4×0.3×0.024in.99.5%alumina.
Max 最大值
—
—
—
-100
-5.0
250
400
600
—
-0.7
-1.2
-1.2
—
10
Unit 單位
V
V
V
nA
uA
—
V
V
V
MHz
pF