GM7002_15 Datasheet, PDF (2/3 Pages) Guilin Strong Micro-Electronics Co., Ltd. – SOT-23 Field Effect Transistors

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM7002
■DEVICE MARKING 打標
GM7002=7002
■ELECTRICAL CHARACTERISTICS 電特性
(T_A=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)
Characteristic
特性參數
Symbol Min
符號 最小值
Typ
典型值
Max
最大值
Drain-Source Breakdown Volta ge
漏極-源極擊穿電壓(ID =250uA,VGS=0V)
B V_DSS
60
Gate Threshold Voltage
栅極開启電壓(ID =250uA,VGS= VDS)
V_GS(th) 1.0
Drain-Source On Voltage
漏極-源極導通電壓(ID=50mA,VGS=5V)
(I_D =500mA,V_GS=10V)
V_DS(ON)
—
Diode Forward Voltage Drop
内附二極管正向壓降(ISD=200mA,VGS=0V) ^VSD
—
Zero Gate Voltage Drain Current
零栅壓漏極電流(V_GS=0V, V_DS= BV_DSS)
I_DSS
—
(V_GS=0V, V_DS=0.8BV_DSS, T_A=125℃)
Gate Body Leakage
栅極漏電流(V_GS=+20V, V_DS=0V)
I_GSS
—
Static Drain-Source On-State Resistance
静态漏源導通電阻(ID=50mA,V_GS=5V)
(ID=500mA,V_GS=10V)
Input Capacitance 輸入電容
(V_GS=0V, V_DS=25V,f=1MHz)
Common Source Output Capacitance
共源輸出電容(VGS=0V, VDS=25V,f=1MHz)
R _DS(ON)
—
C_ISS
—
COSS
—
Turn-ON Time 开启時間
(VDS=30V, ID=200mA, RGEN=25Ω)
Turn-OFF Time 关断時間
(VDS=30V, ID=200mA, RGEN=25Ω)
Reverse Recovery Time 反向恢复時間
(ISD=800mA, VGS=0V)
t (on)
—
t(off)
—
t_rr
—
1. FR-5=1.0×0.75×0.062in.
2. Alumina=0.4×0.3×0.024in.99.5%alumina.
3. Pulse Width<300μs; Duty Cycle <2.0%.
—
—
—
2.5
— 0.375
3.75
—
1.5
—
1
500
— +100
—
7.5
7.5
—
50
—
25
—
20
—
40
400
—
Unit
單位
V
V
V
V
uA
nA
Ω
pF
pF
ns
ns
ns