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| GMBAS70 Datasheet, PDF (1/2 Pages) Guilin Strong Micro-Electronics Co., Ltd. – SCHOTTKY DIODE | |||
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æ¡ææ¯å£¯å¾®é»åæé責任å
¬å¸
Guilin Strong Micro-Electronics Co.,Ltd.
GMBAS70
SCHOTTKY DIODE èç¹åºäºæ¥µç®¡(BAS70)
âFEATURES ç¹é»
Characteristic ç¹æ§åæ¸
Symbol 符è Max æ大å¼
Unit å®ä½
Power dissipation èæ£åç
PD(Ta=25â)
225
mW
Forward Current æ£åé»æµ
IF
70
mA
Reverse Voltage ååé»å£
VR
70
V
Junction and Storage Temperature
çµæº«åå²è溫度
TJ,Tstg
-55to+150â
âDEVICE MARKING ææ¨
BAS70=BE
âELECTRICAL CHARACTERISTICS é»ç¹æ§
(TA=25â unless otherwise noted å¦ç¡ç¹æ®èªªæï¼æº«åº¦ç² 25â)
Characteristic
ç¹æ§åæ¸
Symbol
符è
Min Max
æå°å¼ æ大å¼
Unit
å®ä½
Reverse Breakdown Voltage ååæç©¿é»å£
(IR=10uA)
V(BR)
70
â
V
Reverse Leakage Current ååæ¼é»æµ
(VR=50V)
IR
â
0.1
uA
(VR=70V)
10
Forward Voltage(Test Condition)æ£åé»å£
IF= 1mAdc
IF= 10mAdc
VF
IF= 15mAdc
410
mV
750
â
1000
Diode Capacitance äºæ¥µé«é»å®¹
(VR=1V, f=1MHz)
CD
â
2
pF
Reverse Recovery Time ååæ¢å¾©æé
Trr
â
5
nS
âSOT-23 å
é¨ç»æ
1
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