 English |
|
|
|
|
|
|
|
| GM5551 Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR | |||
| |||
|
GM5551
æ¡ææ¯å£¯å¾®é»åæé責任å
¬å¸
Guilin Strong Micro-Electronics Co.,Ltd.
â MAXIMUM RATINGS æ大é¡å®å¼
Characteristic
ç¹æ§åæ¸
Collector Emitter Voltage
éé»æ¥µ-ç¼å°æ¥µé»å£
Collector Base Voltage
éé»æ¥µ-åºæ¥µé»å£
Emitter Base Voltage
ç¼å°æ¥µ-åºæ¥µé»å£
Collector CurrentâContinuous
éé»æ¥µé»æµ-é£çº
Symbol
符è
VCEO
VCBO
VEBO
Ic
â THERMAL CHARACTERISTICS ç±ç¹æ§
Characteristic
ç¹æ§åæ¸
Total Device Dissipation 總èæ£åç
FR-5 Board(1)
TA=25âç°å¢æº«åº¦ç² 25â
Derate above25âè¶
é 25âéæ¸
Thermal Resistance Junction to Ambient
ç±é»
Total Device Dissipation 總èæ£åç
Alumina Substrate æ°§åé襯åº,(2)TA=25â
Derate above25â è¶
é 25âéæ¸
Thermal Resistance Junction to Ambient
ç±é»
Junction and Storage Temperature
çµæº«åå²å溫度
â DEVICE MARKING ææ¨
Symbol
符è
PD
RÎJA
PD
RÎJA
TJ,Tstg
GM5551=G1
Rating
é¡å®å¼
160
180
5.0
600
Unit
å®ä½
Vdc
Vdc
Vdc
mAdc
Max
æ大å¼
225
1.8
556
300
2.4
417
Unit
å®ä½
mW
mW/â
â/W
mW
mW/â
â/W
150â, -55to+150â
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese