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GM2301_15 Datasheet, PDF (1/3 Pages) Guilin Strong Micro-Electronics Co., Ltd. – SOT-23 Field Effect Transistors | |||
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Guilin Strong Micro-Electronics Co.,Ltd.
GM2301
SOT-23 å ´æææ¶é«ç®¡(SOT-23 Field Effect Transistors)
P-Channel Enhancement-Mode MOS FETs
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â MAXIMUM RATINGS æ大é¡å®å¼
Characteristic
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Symbol
符è
Drain-Source Voltage
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BVDSS
Gate- Source Voltage
æ
極-æºæ¥µé»å£
VGS
Drain Current (continuous)
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ID
Drain Current (pulsed)
æ¼æ¥µé»æµ-èå²
IDM
Total Device Dissipation
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PD
TA=25âç°å¢æº«åº¦ç² 25â
Junction çµæº«
TJ
Storage Temperature å²å溫度
Tstg
â DEVICE MARKING ææ¨
GM2301=A1
Max
æ大å¼
-20
+10
-2.8
-10
900
150
-55to+150
Unit
å®ä½
V
V
A
A
mW
â
â
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