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| BSS84 Datasheet, PDF (1/3 Pages) NXP Semiconductors – P-channel enhancement mode vertical D-MOS transistor | |||
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æ¡ææ¯å£¯å¾®é»åæé責任å
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Guilin Strong Micro-Electronics Co.,Ltd.
BSS84
SOT-23 å ´æææ¶é«ç®¡(SOT-23 Field Effect Transistors)
P-Channel Enhancement-Mode MOS FETs
P æ²éå¢å¼ºå MOS åºæåºç®¡
â MAXIMUM RATINGS æ大é¡å®å¼
Characteristic ç¹æ§åæ¸
Symbol 符è
Max æ大å¼
Unit å®ä½
Drain-Source Voltage
æ¼æ¥µ-æºæ¥µé»å£
Gate- Source Voltage
æ
極-æºæ¥µé»å£
Drain Current (continuous)
æ¼æ¥µé»æµ-é£çº
Drain Current (pulsed)
æ¼æ¥µé»æµ-èå²
BVDSS
VGS
IDR
IDRM
â THERMAL CHARACTERISTICS ç±ç¹æ§
Characteristic ç¹æ§
Total Device Dissipation 總èæ£åç
TA=25âç°å¢æº«åº¦ç² 25â
Derate above25â è¶
é 25âéæ¸
Thermal Resistance Junction to Ambient ç±é»
Junction and Storage Temperature
çµæº«åå²å溫度
Symbol
符è
PD
RÎJA
TJ,Tstg
-50
V
+20
V
-130
mA
-520
mA
Max
æ大å¼
200
1.8
350
Unit
å®ä½
mW
mW/â
â/W
150â,-55to+150â
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