 English |
|
|
|
|
|
|
|
| BAT54C Datasheet, PDF (1/2 Pages) Rectron Semiconductor – DUAL SURFACE MOUNT SCHOTTKY | |||
| |||
|
æ¡ææ¯å£¯å¾®é»åæé責任å
¬å¸
Guilin Strong Micro-Electronics Co.,Ltd.
GMBAT54C
SCHOTTKY DIODE èç¹åºäºæ¥µç®¡(BAT54C)
âFEATURES ç¹é»
Characteristic ç¹æ§åæ¸
Symbol 符è Max æ大å¼
Unit å®ä½
Power dissipation èæ£åç
PD(Ta=25â)
225
mW
Forward Current æ£åé»æµ
IF
200
mA
Reverse Voltage ååé»å£
VR
30
V
Junction and Storage Temperature
çµæº«åå²è溫度
TJ,Tstg
-55to+150â
âDEVICE MARKING ææ¨
BAT54C=KL3
âELECTRICAL CHARACTERISTICS é»ç¹æ§
(TA=25â unless otherwise noted å¦ç¡ç¹æ®èªªæï¼æº«åº¦ç² 25â)
Characteristic
ç¹æ§åæ¸
Symbol
符è
Min Max
æå°å¼ æ大å¼
Unit
å®ä½
Reverse Breakdown Voltage ååæç©¿é»å£
(IR=10uA)
V(BR)
30
â
V
Reverse Leakage Current ååæ¼é»æµ
(VR=25V)
IR
â
2
uA
Forward Voltage(Test Condition)æ£åé»å£
IF=0.1mAdc
IF= 1mAdc
IF= 10mAdc
VF
IF= 30mAdc
IF=100mAdc
Diode Capacitance äºæ¥µé«é»å®¹
(VR=1V, f=1MHz)
CD
Reverse Recovery Time ååæ¢å¾©æé
Trr
âSOT-23 å
é¨ç»æ
240
320
mV
400
500
â
800
â
10
pF
â
5
nS
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese