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1SS181 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) | |||
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Guilin Strong Micro-Electronics Co.,Ltd.
1SS181
SWITCHING DIODE ééäºæ¥µç®¡
âFEATURES ç¹é»
Characteristic ç¹æ§åæ¸
Power dissipation èæ£åç
Forward Current æ£åé»æµ
Reverse Voltage ååé»å£
Junction and Storage Temperature
çµæº«åå²è溫度
â DEVICE MARKING ææ¨
Symbol 符è
PD(Ta=25â)
IF
VR
TJ,Tstg
Max æ大å¼
225
200
80
Unit å®ä½
mW
mA
V
-55to+150â
1SS181=A3
â ELECTRICAL CHARACTERISTICS é»ç¹æ§
(TA=25â unless otherwise noted å¦ç¡ç¹æ®è¯´æï¼æº«åº¦ç² 25â)
Characteristic
ç¹æ§åæ¸
Symbol
符è
Min
æå°å¼
Reverse Breakdown Voltage ååæç©¿é»å£
(IR=100uA)
V(BR)
80
Reverse Leakage Current ååæ¼é»æµ
(VR=80V)
IR
â
Forward Voltage(Test Condition)æ£åé»å£
IF=1mA
IF=10mA
IF=50mA
IF=150mA
Diode Capacitance äºæ¥µé«é»å®¹
(VR=0V, f=1MHz)
Reverse Recovery Time ååæ¢å¾©æé
âSOT-23 å
é¨ç»æ
VF
â
CD
â
Trr
â
Max
æ大å¼
â
0.5
715
855
1000
1250
1.5
4
Unit
å®ä½
V
uA
mV
pF
nS
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