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GS8160E18BT-V Datasheet, PDF (22/23 Pages) GSI Technology – 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
Preliminary
GS8160ExxBT-xxxV
Ordering Information for GSI Synchronous Burst RAMs (Continued)
Org
Part Number1
Type
Voltage
Options
Package
Speed2
(MHz/ns)
TA3
Status4
1M x 18 GS8160E18BGT-200IV
DCD
1.8 V or 2.5 V RoHS-compliant TQFP 200/6.5
I
PQ
1M x 18 GS8160E18BGT-150IV
DCD
1.8 V or 2.5 V RoHS-compliant TQFP 150/7.5
I
PQ
512K x 32 GS8160E32BGT-250IV
DCD
1.8 V or 2.5 V RoHS-compliant TQFP 250/5.5
I
PQ
512K x 32 GS8160E32BGT-200IV
DCD
1.8 V or 2.5 V RoHS-compliant TQFP 200/6.5
I
PQ
512K x 32 GS8160E32BGT-150IV
DCD
1.8 V or 2.5 V RoHS-compliant TQFP 150/7.5
I
PQ
512K x 36 GS8160E36BGT-250IV
DCD
1.8 V or 2.5 V RoHS-compliant TQFP 250/5.5
I
PQ
512K x 36 GS8160E36BGT-200IV
DCD
1.8 V or 2.5 V RoHS-compliant TQFP 200/6.5
I
PQ
512K x 36 GS8160E36BGT-150IV
DCD
1.8 V or 2.5 V RoHS-compliant TQFP 150/7.5
I
PQ
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number.
Example: GS8160E18BT-150IVT.
2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow through mode-selectable by the user.
3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range.
4. MP = Mass Production. PQ = Pre-Qualification.
5. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which
are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Rev: 1.01 5/2006
22/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2004, GSI Technology