English
Language : 

GS81314LD36GK-106 Datasheet, PDF (20/40 Pages) GSI Technology – Burst of 4 Multi-Bank ECCRAM
GS81314LD18/36GK-133/120/106
Read Latency
Read Latency (i.e. the number of cycles from read command input to first read data output) is specified as follows:
Read Latency
6 cycles
Comment
First read data output 6 cycles after read command input
Note: The RLM register bit must remain “1” in these devices while initiating Read operations, to keep Read Latency = 6 cycles.
Write Latency
Write Latency (i.e. the number of cycles from write command input to first write data input) is specified as follows:
Write Latency
-1 cycle
Comment
First write date input 1 cycle before write command input
Read / Write Coherency
These devices are fully coherent. That is, Read operations always return the most recently written data to a particular address, even
when a Read operation to a particular address occurs one cycle after a Write operation to the same address.
Rev: 1.09 5/2016
20/40
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2014, GSI Technology