GS81302Q08E-250I Datasheet, PDF (19/33 Pages) GSI Technology – 144Mb SigmaQuadTM-II Burst of 2 SRAM

GS81302Q08/09/18/36E-300/250
Operating Currents
Parameter
Symbol
Test Conditions
Operating Current (x36): DDR
I_DD
V_DD = Max, I_OUT = 0 mA
Cycle Time t_KHKH Min
Operating Current (x18): DDR
I_DD
V_DD = Max, I_OUT = 0 mA
Cycle Time t_KHKH Min
Operating Current (x9): DDR
I_DD
V_DD = Max, I_OUT = 0 mA
Cycle Time t_KHKH Min
Operating Current (x8): DDR
I_DD
V_DD = Max, I_OUT = 0 mA
Cycle Time t_KHKH Min
Device deselected,
Standby Current (NOP): DDR
I_SB1
I_OUT = 0 mA, f = Max,
All Inputs 0.2 V or V_DD – 0.2 V
Notes:
1. Power measured with output pins floating.
2. Minimum cycle, I_OUT = 0 mA
3. Operating current is calculated with 50% read cycles and 50% write cycles.
4. Standby Current is only after all pending read and write burst operations are completed.
-300
0
–40
to
to
70°C
85°C
1330 mA 1340 mA
-250
0
–40
to
to
70°C
85°C
1130 mA 1140 mA
Notes
2, 3
1250 mA 1260 mA 1060 mA 1070 mA
2, 3
1250 mA 1260 mA 1060 mA 1070 mA
2, 3
1250 mA 1260 mA 1060 mA 1070 mA
2, 3
295 mA
305 mA
275 mA
285 mA
2, 4
Rev: 1.04d 8/2017
19/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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