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GS8161E18BT Datasheet, PDF (18/35 Pages) GSI Technology – 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs | |||
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DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
ZZ Input Current
FT Input Current
Output Leakage Current
Output High Voltage
Output High Voltage
Output Low Voltage
GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D)
Symbol
IIL
IIN1
IIN2
IOL
VOH2
VOH3
VOL
Test Conditions
VIN = 0 to VDD
VDD ⥠VIN ⥠VIH
0 V ⤠VIN ⤠VIH
VDD ⥠VIN ⥠VIL
0 V ⤠VIN ⤠VIL
Output Disable, VOUT = 0 to VDD
IOH = â8 mA, VDDQ = 2.375 V
IOH = â8 mA, VDDQ = 3.135 V
IOL = 8 mA
Min
â1 uA
â1 uA
â1 uA
â100 uA
â1 uA
â1 uA
1.7 V
2.4 V
â
Max
1 uA
1 uA
100 uA
1 uA
1 uA
1 uA
â
â
0.4 V
Rev: 1.03 9/2005
18/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2004, GSI Technology
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