GS81302Q18GE-300I Datasheet, PDF (18/34 Pages) GSI Technology – 144Mb SigmaQuadTM-II Burst of 2 SRAM

GS81302Q08/09/18/36E-300/250
Input and Output Leakage Characteristics
Parameter
Input Leakage Current
(except mode pins)
Doff
Symbol
I_IL
I_ILDOFF
Output Leakage Current
I_OL
Test Conditions
V_IN = 0 to V_DD
V_IN = 0 to V_DD
Output Disable,
V_OUT = 0 to V_DDQ
Min.
Max
–2 uA
2 uA
–20 uA
2 uA
–2 uA
2 uA
Programmable Impedance HSTL Output Driver DC Electrical Characteristics
Parameter
Symbol
Min.
Output High Voltage
V_OH1
V_DDQ/2 – 0.12
Output Low Voltage
V_OL1
V_DDQ/2 – 0.12
Output High Voltage
V_OH2
V_DDQ – 0.2
Output Low Voltage
V_OL2
Vss
Notes:
1. I_OH = (V_DDQ/2) / (RQ/5) +/– 15% @ V_OH = V_DDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).
2. I_OL = (V_DDQ/2) / (RQ/5) +/– 15% @ V_OL = V_DDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).
3. Parameter tested with RQ = 250Ω and V_DDQ = 1.5 V or 1.8 V
4. 0Ω ≤ RQ ≤ ∞Ω
5. I_OH = –1.0 mA
6. I_OL = 1.0 mA
Max.
V_DDQ/2 + 0.12
V_DDQ/2 + 0.12
V_DDQ
0.2
Units
V
V
V
V
Notes
1, 3
2, 3
4, 5
4, 6
Rev: 1.04c 1/2012
18/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology