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GS82612QT19CE-350M Datasheet, PDF (17/30 Pages) GSI Technology – Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II+TM | |||
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Preliminary
GS82612QT19/37CE-350M/250M
GS81332QT19/37CE-350M/250M
GS8692QT19/37CE-350M/250M
Programmable Impedance HSTL Output Driver DC Electrical Characteristics
Parameter
Symbol
Min.
Output High Voltage
VOH1
VDDQ/2 â 0.12
Output Low Voltage
VOL1
VDDQ/2 â 0.12
Output High Voltage
VOH2
VDDQ â 0.2
Output Low Voltage
VOL2
Vss
Notes:
1. IOH = (VDDQ/2) / (RQ/5) +/â 15% @ VOH = VDDQ/2 (for: 175ï ï£ï RQ ï£ 350ïï©ï®
2. IOL = (VDDQ/2) / (RQ/5) +/â 15% @ VOL = VDDQ/2 (for: 175ï ï£ RQ ï£350ïï©.
3. Parameter tested with RQ = 250ï and VDDQ = 1.5 V
4. 0ïï ï£ï RQ ï£ ï¥ï
5. IOH = â1.0 mA
6. IOL = 1.0 mA
Max.
VDDQ/2 + 0.12
VDDQ/2 + 0.12
VDDQ
0.2
Units
V
V
V
V
Notes
1, 3
2, 3
4, 5
4, 6
Rev: 1.01 7/2017
17/30
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2017, GSI Technology
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