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| GS8256436GD-200IV Datasheet, PDF (17/33 Pages) GSI Technology – 16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs | |||
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GS8256418/36(GB/GD)-xxxV
Operating Currents
-333
Parameter
Test Conditions
Mode
Symbol
0
â40
to
to
85°C 100°C
Operating
Current
Device Selected;
All other inputs
ï³VIH or ï£ï VIL
Output open
Pipeline
(x36)
IDD
Flow Through
IDD
Pipeline
(x18)
IDD
Flow Through
IDD
690
710
530
550
630
650
490
510
Standby
Current
Deselect
Current
ZZ ï³ï VDD â 0.2 V
Device Deselected;
All other inputs
ï³ï VIH or ï£ VIL
Pipeline
â
ISB
Flow Through
ISB
Pipeline
IDD
â
Flow Through
IDD
180
180
180
180
230
250
220
240
Notes:
1. IDD and IDDQ apply to any combination of VDD3, VDD2, VDDQ3, and VDDQ2 operation.
2. All parameters listed are worst case scenario.
-250
0
â40
to
to
85°C 100°C
570 590
470 490
520 540
430 450
180 180
180 180
220 240
200 220
-200
0
â40 Unit
to
to
85°C 100°C
490 510 mA
440 460 mA
450 470 mA
400 420 mA
180 180 mA
180 180 mA
200 220 mA
200 220 mA
Rev: 1.03 5/2017
17/32
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2015, GSI Technology
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