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GS8180QV36BGD-200 Datasheet, PDF (17/28 Pages) GSI Technology – 18Mb Burst of 2 SigmaQuad SRAM | |||
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GS8180QV18/36BD-200/167
AC Electrical Characteristics
Parameter
Symbol
-200
Min Max
K, K Clock Cycle Time
C, C Clock Cycle Time
tKHKH
tCHCH
5.0
â
K, K Clock High Pulse Width
C, C Clock High Pulse Width
tKHKL
tCHCL
2.0
â
K, K Clock Low Pulse Width
C, C Clock Low Pulse Width
tKLKH
tCLCH
2.0
â
K Clock High to K Clock High
C Clock High to C Clock High
tKHKH
tCHCH
2.2
K Clock High to K Clock High
C Clock High to C Clock High
tKHKH
tCHCH
2.2
K, K Clock High to C, C Clock High
tKHCH
0
1.7
Address Input Setup Time
tAVKH
0.6
â
Address Input Hold Time
tKHAX
0.6
â
Control Input Setup Time
tBVKH
0.6
â
Control Input Hold Time
tKHBX
0.6
â
Data and Byte Write Input Setup Time
tDVKH
0.6
â
Data and Byte Write Input Hold Time
tKHDX
0.6
â
K, K Clock High to Data Output Valid
C, C Clock High to Data Output Valid
tKHQV
tCHQV
â
2.3
K, K Clock High to Data Output Hold
C, C Clock High to Data Output Hold
tKHQX
tCHQX
1.2
â
K Clock High to Data Output Low-Z
C Clock High to Data Output Low-Z
tKHQX1
tCHQX1
1.2
â
K Clock High to Data Output High-Z
C Clock High to Data Output High-Z
tKHQZ
tCHQZ
â
2.3
Notes:
1. These parameters apply to control inputs R and W.
2. These parameters are guaranteed by design and characterization. Not 100% tested.
3. These parameters are measured at ±50mV from steady state voltage.
4. tKHKH Max is specified by tKHKH Min. tCHCH Max is specified by tCHCH Min.
-167
Min Max
6.0
â
2.4
â
2.4
â
2.7
â
2.7
â
0
2.0
0.7
â
0.7
â
0.7
â
0.7
â
0.7
â
0.7
â
â
2.5
1.2
â
1.2
â
â
2.5
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
4
1
1
2
2,3
2,3
Rev: 1.02b 11/2011
17/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2007, GSI Technology
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