GS8321EV18E Datasheet, PDF (16/33 Pages) GSI Technology – 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs

GS8321EV18/32/36E-250/225/200/166/150/133
Operating Currents
-250
-225
-200
-166
-150
Parameter Test Conditions
Mode
Symbol ^{0 –40 0 –40 0 –40 0 –40 0 –40 0}
to to to to to to to to to to to
70°C 85°C 70°C 85°C 70°C 85°C 70°C 85°C 70°C 85°C 70°C
Pipeline
(x32/
I_DD
I_DDQ
280 290 245 255 215 225 200 210 190 200 170
50 50 45 45 40 40 35 35 30 30 25
x36)
Device Selected;
Flow
I_{DD 210 220 200 210 190 200 180 190 170 180 160}
Operating All other inputs
Through I_DDQ 25 25 25 25 20 20 20 20 20 20 15
Current
≥V_IH or ≤ V_IL
Output open
Pipeline
I_DD
I_DDQ
260 270 225 235 195 205 180 190 170 180 150
25 25 25 25 20 20 20 20 20 20 15
(x18)
Flow
I_{DD 190 200 180 190 170 180 160 170 150 160 140}
Through I_DDQ 15 15 15 15 15 15 15 15 15 15 15
Pipeline I_SB
Standby
Current
ZZ ≥ V_DD – 0.2 V —
Flow
Through
I_SB
40 50 40 50 40 50 40 50 40 50 40
40 50 40 50 40 50 40 50 40 50 40
Device Deselected;
Pipeline I_DD
Deselect
Current
All other inputs
≥ V_IH or ≤ V_IL
—
Flow
Through
I_DD
75 80 75 80 70 75 70 75 65 70 60
65 70 65 70 60 65 60 65 55 60 50
Notes:
1. I_DD and I_DDQ apply to any combination of V_DD3, V_DD2, V_DDQ3, and V_DDQ2 operation.
2. All parameters listed are worst case scenario.
Rev: 1.03 4/2005
16/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology