 English |
|
|
|
|
|
|
|
| GS81302TT07 Datasheet, PDF (16/30 Pages) GSI Technology – 144Mb SigmaDDRTM-II+ Burst of 2 SRAM | |||
| |||
| ◁ |
GS81302TT07/10/19/37E-450/400/350/333/300
Programmable Impedance HSTL Output Driver DC Electrical Characteristics
Parameter
Symbol
Min.
Max.
Output High Voltage
VOH1
VDDQ/2 â 0.12 VDDQ/2 + 0.12
Output Low Voltage
VOL1
VDDQ/2 â 0.12 VDDQ/2 + 0.12
Output High Voltage
VOH2
VDDQ â 0.2
VDDQ
Output Low Voltage
VOL2
Vss
0.2
Notes:
1. IOH = (VDDQ/2) / (RQ/5) +/â 15% @ VOH = VDDQ/2 (for: 175Ω ⤠RQ ⤠350Ω).
2. IOL = (VDDQ/2) / (RQ/5) +/â 15% @ VOL = VDDQ/2 (for: 175Ω ⤠RQ ⤠350Ω).
3. Parameter tested with RQ = 250Ω and VDDQ = 1.5 V
4. 0Ω ⤠RQ ⤠âΩ
5. IOH = â1.0 mA
6. IOL = 1.0 mA
Units
V
V
V
V
Notes
1, 3
2, 3
4, 5
4, 6
Rev: 1.00a 11/2011
16/30
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese