GS8128236GB-200IV Datasheet, PDF(16/35 Page) GSI Technology – 8M x 18, 4M x 36 144Mb S/DCD Sync Burst SRAMs

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GS8128236GB-200IV Datasheet, PDF (16/35 Pages) GSI Technology – 8M x 18, 4M x 36 144Mb S/DCD Sync Burst SRAMs

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GS8128218/36(GB/GD)-xxxV

AC Test Conditions

Parameter

Input high level

Input low level

Input slew rate

Input reference level

Output reference level

Output load

Notes:

1. Include scope and jig capacitance.

2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted.

3. Device is deselected as defined by the Truth Table.

Conditions

VDD â 0.2 V

0.2 V

1 V/ns

VDD/2

VDDQ/2

Fig. 1

DC Electrical Characteristics

Parameter

Input Leakage Current

(except mode pins)

ZZ Input Current

FT, SCD, ZQ Input Current

Output Leakage Current

Output High Voltage

Output High Voltage

Output Low Voltage

Output Load 1

DQ

50ï

30pF*

VDDQ/2

* Distributed Test Jig Capacitance

Symbol

IIL

IIN1

IIN2

IOL

VOH2

VOH3

VOL

Test Conditions

VIN = 0 to VDD

VDD ï³ VIN ï³ VIH

0 V ï£ï VIN ï£ï VIH

VDD ï³ VIN ï³ VIL

0 V ï£ï VIN ï£ï VIL

Output Disable, VOUT = 0 to VDD

IOH = â8 mA, VDDQ = 2.375 V

IOH = â8 mA, VDDQ = 3.135 V

IOL = 8 mA

Min

â1 uA

â1 uA

â1 uA

â100 uA

â1 uA

â1 uA

1.7 V

2.4 V

â

Max

1 uA

1 uA

100 uA

1 uA

1 uA

1 uA

â

â

0.4 V

Rev: 1.01 5/2017

16/34

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Â© 2015, GSI Technology

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