GS8128218GB-250I Datasheet, PDF (16/37 Pages) GSI Technology – 8M x 18, 4M x 36 144Mb S/DCD Sync Burst SRAMs

GS8128218/36(GB/GD)-400/333/250/200
Capacitance
(T_A = 25^oC, f = 1 MHZ, V_DD = 2.5 V)
Parameter
Input Capacitance
Input/Output Capacitance
Note:
These parameters are sample tested.
Symbol
C_IN
C_I/O
Test conditions
V_IN = 0 V
V_OUT = 0 V
AC Test Conditions
Parameter
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
Typ.
Max.
Unit
4
5
pF
6
7
pF
Conditions
V_DD – 0.2 V
0.2 V
1 V/ns
V_DD/2
V_DDQ/2
Fig. 1
Output Load 1
DQ
50
30pF^*
V_DDQ/2
* Distributed Test Jig Capacitance
Rev: 1.01 5/2017
16/36
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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