GS8160V18AT Datasheet, PDF (15/24 Pages) GSI Technology – 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
ZZ Input Current
FTInput Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I_IL
I_IN1
I_IN2
I_OL
V_OH
V_OL
Preliminary
GS8160V18/32/36AT-350/333/300/250/200/150
Test Conditions
V_IN = 0 to V_DD
V_DD ≥ V_IN ≥ V_IH
0 V ≤ V_IN ≤ V_IH
V_DD ≥ V_IN ≥ V_IL
0 V ≤ V_IN ≤ V_IL
Output Disable, V_OUT = 0 to V_DD
I_OH = –4 mA, V_DDQ = 1.6 V
I_OL = 4 mA, V_DD = 1.6 V
Min
Max
–1 uA
1 uA
–1 uA
–1 uA
–100 uA
–1 uA
–1 uA
V_DDQ – 0.4 V
—
1 uA
100 uA
1 uA
1 uA
1 uA
—
0.4 V
Rev: 1.00a 6/2003
15/24
© 2003, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.