GS8160F18BT-V Datasheet, PDF (15/21 Pages) GSI Technology – 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

Preliminary
GS8160FxxBT-xxxV
Operating Currents
-5.5
-6.5
-7.5
Parameter
Test Conditions
Mode
Symbol
0
–40
0
–40
0
–40 _Unit
to
to
to
to
to
to
70°C 85°C 70°C 85°C 70°C 85°C
Operating
Current
Device Selected;
All other inputs
≥V_IH or ≤ V_IL
Output open
(x32/
x36)
Flow Through
I_DD
I_DDQ
(x18) Flow Through
I_DD
I_DDQ
220
20
230
20
190
15
200
15
175
15
185
15
mA
200
10
210
10
175
10
185
10
160
10
170
10
mA
Standby
Current
ZZ ≥ V_DD – 0.2 V
— Flow Through
I_SB
40
50
40
50
40
50
mA
Deselect
Current
Device Deselected;
All other inputs
≥ V_IH or ≤ V_IL
— Flow Through
I_DD
Notes:
1. I_DD and I_DDQ apply to any combination of V_DD and V_DDQ operation.
2. All parameters listed are worst case scenario.
60
65
50
55
50
55
mA
AC Electrical Characteristics
Parameter
Symbol
-5.5
-6.5
-7.5
Unit
Min
Max
Min
Max
Min
Max
Flow Through
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
Clock to Output in Low-Z
Setup time
Hold time
tKC
5.5
—
6.5
—
7.5
—
ns
tKQ
—
5.5
—
6.5
—
7.5
ns
tKQX
3.0
—
3.0
—
3.0
—
ns
tLZ¹
3.0
—
3.0
—
3.0
—
ns
tS
1.5
—
1.5
—
1.5
—
ns
tH
0.5
—
0.5
—
0.5
—
ns
Clock HIGH Time
tKH
1.3
—
1.3
—
1.5
—
ns
Clock LOW Time
tKL
1.7
—
1.7
—
1.7
—
ns
Clock to Output in
High-Z
tHZ¹
1.5
2.5
1.5
3.0
1.5
3.0
ns
G to Output Valid
tOE
—
2.5
—
3.0
—
3.8
ns
G to output in Low-Z
G to output in High-Z
ZZ setup time
ZZ hold time
tOLZ¹
tOHZ¹
tZZS²
tZZH²
0
—
0
—
0
—
ns
—
2.5
—
3.0
—
3.8
ns
5
—
5
—
5
—
ns
1
—
1
—
1
—
ns
ZZ recovery
tZZR
20
—
20
—
20
—
ns
Notes:
1. These parameters are sampled and are not 100% tested.
2. ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Rev: 1.01 5/2006
15/21
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2004, GSI Technology