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| GS8180QV18 Datasheet, PDF (14/28 Pages) GSI Technology – 18Mb Burst of 2 SigmaQuad SRAM | |||
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GS8180QV18/36BD-200/167
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 3.3 V)
Parameter
Input Capacitance
Output Capacitance
Note:
This parameter is sample tested.
Symbol
CIN
COUT
Test conditions
VIN = 0 V
VOUT = 0 V
AC Test Conditions
Parameter
Input high level
Input low level
Max. input slew rate
Input reference level
Output reference level
Notes:
Test conditions as specified with output loading as shown unless otherwise noted.
Typ.
Max.
4
5
6
7
Conditions
VDDQ
0V
2 V/ns
VDDQ/2
VDDQ/2
AC Test Load Diagram
DQ
RQ = 250 Ω (HSTL I/O)
50Ω
VREF = 0.75 V
VT = VDDQ/2
Input and Output Leakage Characteristics
Parameter
Input Leakage Current
(except mode pins)
Symbol
IIL
Output Leakage Current
IOL
Test Conditions
VIN = 0 to VDD
Output Disable,
VOUT = 0 to VDDQ
Min.
Max
â2 uA
2 uA
â2 uA
2 uA
Unit
pF
pF
Notes
Rev: 1.02b 11/2011
14/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2007, GSI Technology
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