GS8160V18CT Datasheet, PDF (14/21 Pages) GSI Technology – 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs

Preliminary
GS8160V18/36CT-333/300/250
Operating Currents
Parameter
Test Conditions
Mode
Symbol
Operating
Current
Device Selected;
All other inputs
≥V_IH or ≤ V_IL
Output open
Pipeline
I_DD
I_DDQ
(x36)
Flow Through
I_DD
I_DDQ
Pipeline
I_DD
I_DDQ
(x18)
Flow Through
I_DD
I_DDQ
Standby
Current
ZZ ≥ V_DD – 0.2 V
Pipeline
I_SB
—
Flow Through
I_SB
Deselect
Current
Device Deselected;
All other inputs
≥ V_IH or ≤ V_IL
Pipeline
I_DD
—
Flow Through
I_DD
Notes:
1. I_DD and I_DDQ apply to any combination of V_DD and V_DDQ operation.
2. All parameters listed are worst case scenario.
-333
0
–40
to
to
70°C 85°C
385
395
50
50
300
310
35
35
345
355
30
30
260
270
20
20
40
50
40
50
85
90
60
65
-300
-250
0
–40
0
–40 _Unit
to
to
to
to
°C 85°C 70°C 85°C
345
45
355
45
290
40
300
40
mA
240
30
250
30
220
20
230
20
mA
310
25
320
25
260
20
270
20
mA
215
15
225
15
200
10
210
10
mA
40
50
40
50
mA
40
50
40
50
mA
85
90
85
90
mA
60
65
60
65
mA
Rev: 1.00 9/2004
14/21
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2004, GSI Technology