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| GS81332QT37CE-350M Datasheet, PDF (14/30 Pages) GSI Technology – Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II+TM | |||
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Preliminary
GS82612QT19/37CE-350M/250M
GS81332QT19/37CE-350M/250M
GS8692QT19/37CE-350M/250M
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
â0.5 to 2.9
V
VDDQ
Voltage in VDDQ Pins
â0.5 to VDD
V
VREF
Voltage in VREF Pins
â0.5 to VDDQ
V
VI/O
Voltage on I/O Pins
â0.5 to VDDQ +0.5 (ï£ 2.9 V max.)
V
VIN
Input Voltage (Address, Control, Data, Clock)
â0.5 to VDDQ +0.5 (ï£ 2.9 V max.)
V
VTIN
Input Voltage (TCK, TMS, TDI)
â0.5 to VDDQ +0.5 (ï£ 2.9 V max.)
V
IIN
Input Current on Any Pin
+/â100
mA dc
IOUT
Output Current on Any I/O Pin
+/â100
mA dc
TJ
Maximum Junction Temperature
125
oC
TSTG
Storage Temperature
â65 to 150 (TBR)
oC
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect
reliability of this component.
Recommended Operating Conditions
Power Supplies
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
VDD
1.7
1.8
1.9
V
I/O Supply Voltage
VDDQ
1.4
â
VDD
V
Reference Voltage
VREF
VDDQ/2 â 0.05
â
VDDQ/2 + 0.05
V
Note:
The power supplies need to be powered up simultaneously or in the following sequence: VDD, VDDQ, VREF, followed by signal inputs. The power
down sequence must be the reverse. VDDQ must not exceed VDD. For more information, read AN1021 SigmaQuad and SigmaDDR Power-Up.
Operating Temperature
Parameter
Junction Temperature
Symbol
TJ
Min.
Typ.
Max.
Unit
â55
25
125
ï°C
Rev: 1.01 7/2017
14/30
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2017, GSI Technology
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