GS8160Z36DGT-200I Datasheet, PDF (13/24 Pages) GSI Technology – 18Mb Pipelined and Flow Through Synchronous NBT SRAMs

GS8160Z18/36DGT-400/375/333/250/200/150
Absolute Maximum Ratings
(All voltages reference to V_SS)
Symbol
Description
Value
Unit
V_DD
Voltage on V_DD Pins
–0.5 to 4.6
V
V_DDQ
Voltage in V_DDQ Pins
–0.5 to V_DD
V
V_I/O
Voltage on I/O Pins
–0.5 to V_DD +0.5 ( 4.6 V max.)
V
V_IN
Voltage on Other Input Pins
–0.5 to V_DD +0.5 ( 4.6 V max.)
V
I_IN
Input Current on Any Pin
+/–20
mA
I_OUT
Output Current on Any I/O Pin
+/–20
mA
P_D
Package Power Dissipation
1.5
W
T_STG
Storage Temperature
–55 to 125
o_C
T_BIAS
Temperature Under Bias
–55 to 125
o_C
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges
Parameter
3.3 V Supply Voltage
2.5 V Supply Voltage
3.3 V V_DDQ I/O Supply Voltage
2.5 V V_DDQ I/O Supply Voltage
Symbol
Min.
Typ.
Max.
Unit
V_DD3
3.0
3.3
3.6
V
V_DD2
2.3
2.5
2.7
V
V_DDQ3
3.0
3.3
3.6
V
V_DDQ2
2.3
2.5
2.7
V
V_DD3 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Input High Voltage
V_IH
2.0
—
V_DD + 0.3
V
Input Low Voltage
V_IL
–0.3
—
0.8
V
Notes:
1. V_IH (max) must be met for any instantaneous value of V_DD.
2. V_DD needs to power-up before or at the same time as V_DDQ to make sure V_IH (max) is not exceeded.
Rev: 1.03b 9/2013
13/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology