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| GS81302QT20AGD-500I Datasheet, PDF (13/25 Pages) GSI Technology – 144Mb SigmaQuad-II+TM Burst of 2 SRAM | |||
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Preliminary
GS81302QT20/38AGD-500/450/400
Operating Currents
-500
-450
Parameter
Symbol
Test Conditions
0°
to
70°C
â40°
to
85°C
0°
to 70°C
â40°
to
85°C
Operating
Current (x36):
IDD
DDR
VDD = Max, IOUT = 0 mA
Cycle Time ï³ï tKHKH Min
TBD
TBD
TBD
TBD
Operating
Current (x18):
IDD
DDR
VDD = Max, IOUT = 0 mA
Cycle Time ï³ï tKHKH Min
TBD
TBD
TBD
TBD
Operating
Current (x9):
IDD
DDR
VDD = Max, IOUT = 0 mA
Cycle Time ï³ï tKHKH Min
TBD
TBD
TBD
TBD
Operating
Current (x8):
IDD
DDR
VDD = Max, IOUT = 0 mA
Cycle Time ï³ï tKHKH Min
TBD
TBD
TBD
TBD
Standby Current
(NOP): DDR
ISB1
Device deselected,
IOUT = 0 mA, f = Max,
All Inputs ï£ï 0.2 V
or ï³ï VDD â 0.2 V
TBD
TBD
TBD
TBD
Notes:
1. Power measured with output pins floating.
2. Minimum cycle, IOUT = 0 mA
3. Operating current is calculated with 50% read cycles and 50% write cycles.
4. Standby Current is only after all pending read and write burst operations are completed.
-400
0°
â40°
to 70°C to 85°C
Notes
TBD
TBD
2, 3
TBD
TBD
2, 3
TBD
TBD
2, 3
TBD
TBD
2, 3
TBD
TBD
2, 4
Rev: 1.00a 5/2017
13/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2017, GSI Technology
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