GS8182Q18D Datasheet, PDF (12/28 Pages) GSI Technology – 18Mb Burst of 2 SigmaQuad-II SRAM

State Diagram
Power-Up
Preliminary
GS8182Q18D-200/167/133
READ
Read NOP
READ
READ
Load New
Read Address
Always
(Fixed)
READ
DDR Read
WRITE
Write NOP
WRITE
Load New
Write Address
WRITE
Always
(Fixed)
DDR Write
WRITE
Notes:
1. Internal burst counter is fixed as 1-bit linear (i.e., when first address is A0+), next internal burst address is A0+1.
2. “READ” refers to read active status with R = Low, “READ” refers to read inactive status with R = High. The same is
true for “WRITE” and “WRITE”.
3. Read and write state machine can be active simultaneously.
4. State machine control timing sequence is controlled by K.
Rev: 1.02 11/2004
12/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology