GS816273CC-250V Datasheet, PDF (12/28 Pages) GSI Technology – 256K x 72 18Mb S/DCD Sync Burst SRAMs

Preliminary
GS816273CC-250V
V_DDQ2 & V_DDQ1 Range Logic Levels
Parameter
Symbol Min.
Typ.
Max.
Unit Notes
V_DD Input High Voltage
V_IH
0.6*V_DD
—
V_DD + 0.3
V
1,2
V_DD Input Low Voltage
V_IL
–0.3
—
0.3*V_DD
V
1,2
I/O Input High Voltage
V_IHQ
2.0
—
V_DD + 0.3
V
1,3
I/O Input Low Voltage
V_ILQ
–0.3
—
0.8
V
1,3
Notes:
4. Input Under/overshoot voltage must be –2 V > Vi < V_DDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
5. Applies to input-only pins (e.g., address, clock, or control pins)
6. Applies to I/O pins (e.g., DQ pins)
Undershoot Measurement and Timing
V_IH
V_SS
50%
V_SS – 2.0 V
20% tKC
Overshoot Measurement and Timing
V_DD + 2.0 V
50%
20% tKC
V_DD
V_IL
Recommended Operating Temperatures
Parameter
Symbol Min.
Typ.
Max.
Unit Notes
Ambient Temperature (Commercial Range Versions)
T_A
0
25
70
°C
2
Ambient Temperature (Industrial Range Versions)
T_A
–40
25
85
°C
2
Note:
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
Capacitance
(T_A = 25^oC, f = 1 MHZ, V_DD = 2.5 V)
Parameter
Symbol
Input Capacitance
C_IN
Input/Output Capacitance
C_I/O
Note:
These parameters are sample tested.
Test conditions
V_IN = 0 V
V_OUT = 0 V
Typ. Max. Unit
4
5
pF
6
7
pF
Rev: 1.01a 6/2006
12/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2005, GSI Technology