GS8673EQ36BGK-625IS Datasheet, PDF (11/25 Pages) GSI Technology – For use with GSI SRAM Port IP

GS8673EQ18/36BK-725S/625S/550S
I/O Capacitance
Parameter
Input Capacitance
Output Capacitance
Notes:
1. V_IN = V_DDQ/2.
2. V_OUT = V_DDQ/2.
3. T_A = 25°C, f = 1 MHz.
Symbol
Min
C_IN
—
C_OUT
—
Input Electrical Characteristics when MVQ = 0
Parameter
Symbol
Min
DC Input Reference Voltage
V_REFdc
0.48 * V_DDQ
DC Input High Voltage
V_IH1dc
V_REF + 0.08
DC Input Low Voltage
V_IL1dc
–0.15
DC Input High Voltage
V_IH2dc
0.75 * V_DDQ
DC Input Low Voltage
V_IL2dc
–0.15
AC Input Reference Voltage
V_REFac
0.47 * V_DDQ
AC Input High Voltage
V_IH1ac
V_REF + 0.15
AC Input Low Voltage
V_IL1ac
–0.25
AC Input High Voltage
V_IH2ac
V_DDQ – 0.2
AC Input Low Voltage
V_IL2ac
– 0.25
Notes:
1. V_REFac is equal to V_REFdc plus noise.
2. V_IH max and V_IL min apply for pulse widths less than one-quarter of the cycle time.
3. Input rise and fall times must be a minimum of 1 V/ns, and within 10% of each other.
4. Applies to: CK, CK, KD, KD, SA, R, W, D.
5. Applies to: RST, MVQ, MZT, PZT.
Max
Units Notes
5.0
pF
1, 3
5.5
pF
2, 3
Max
0.52 * V_DDQ
V_DDQ + 0.15
V_REF – 0.08
V_DDQ + 0.15
0.25 * V_DDQ
0.53 * V_DDQ
V_DDQ + 0.25
V_REF – 0.15
V_DDQ + 0.25
0.2
Units
V
V
V
V
V
V
V
V
V
V
Notes
—
4
4
5
5
1
2, 3, 4
2, 3, 4
2, 5
2, 5
Rev: 1.03 6/2014
11/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2012, GSI Technology