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| GS81032AT Datasheet, PDF (10/23 Pages) GSI Technology – 32K x 32 1M Synchronous Burst SRAM | |||
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GS81032AT/Q-150/138/133/117/100/66
Undershoot Measurement and Timing
VIH
VSS
50%
VSS â 2.0 V
20% tKC
Overshoot Measurement and Timing
VDD + -2.0 V
50%
20% tKC
VDD
VIL
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 3.3 V)
Parameter
Control Input Capacitance
Input Capacitance
Output Capacitance
Note: This parameter is sample tested.
Symbol
CI
CIN
COUT
Test conditions
VDD = 3.3 V
VIN = 0 V
VOUT = 0V
Typ. Max. Unit
3
4
pF
4
5
pF
6
7
pF
Package Thermal Characteristics
Rating
Layer Board Symbol TQFP Max QFP Max Unit Notes
Junction to Ambient (at 200 lfm)
single
RÎJA
40
TBD
°C/W 1,2,4
Junction to Ambient (at 200 lfm)
four
RÎJA
24
TBD
°C/W 1,2,4
Junction to Case (TOP)
RÎJC
9
TBD
°C/W
3,4
Notes:
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87.
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.
4. For x18 configuration, consult factory.
Rev: 1.01 7/2001
10/23
© 2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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