GS8640V18T Datasheet, PDF (1/23 Pages) GSI Technology – 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs

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GS8640V18/32/36T-300/250/200/167
100-Pin TQFP
Commercial Temp
Industrial Temp
4M x 18, 2M x 32, 2M x 36
72Mb Sync Burst SRAMs
300 MHz–167 MHz
1.8 V V_DD
1.8 V I/O
Features
• FT pin for user-configurable flow through or pipeline
operation
• Single Cycle Deselect (SCD) operation
• 1.8 V +10%/–10% core power supply
• 1.8 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
• Pb-Free 100-lead TQFP package available
Functional Description
Applications
The GS8640V18/32/36T is a 75,497,472-bit high performance
synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache
applications supporting high performance CPUs, the device
now finds application in synchronous SRAM applications,
ranging from DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode
pin low places the RAM in Flow Through mode, causing
output data to bypass the Data Output Register. Holding FT
high places the RAM in Pipeline mode, activating the rising-
edge-triggered Data Output Register.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS8640V18/32/36T operates on a 1.8 V power supply. All
input are 1.8 V compatible. Separate output power (V_DDQ)
pins are used to decouple output noise from the internal circuits
and are 1.8 V compatible.
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
Parameter Synopsis
t_KQ
tCycle
Curr (x18)
Curr (x32/x36)
t_KQ
tCycle
Curr (x18)
Curr (x32/x36)
-300 -250 -200 -167 Unit
2.3 2.5 3.0 3.5 ns
3.3 4.0 5.0 6.0 ns
400 340 290 260 mA
480 410 350 305 mA
5.5 6.5 7.5 8.0 ns
5.5 6.5 7.5 8.0 ns
285 245 220 210 mA
330 280 250 240 mA
Rev: 1.00 9/2004
1/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2004, GSI Technology