SB120-1.3 Datasheet, PDF (1/1 Pages) Gunter Seniconductor GmbH. – Chips for Schottky Diodes

SB 1XX - 1.3
Chips for Schottky Diodes
Chip Specification
General Description:
Schottky Diode chips with Mo-barrier for switch mode power
rectifiers with the following features:
* Guard-ring for stress protection
* Extremely low forward voltage
* 125 ℃ operation junction temperature
* reverse avalanche behavior
Mechanical Data:
SB 1XX passivated Silicon Chip
Demension(mm) 1,3x1,3
Thickness:
350 +- 20 µm
Metallization:
Top ( Anode ) :
Al Ag
Bottom ( Cathode) : TiNiAg
Forward Current(A)
1A
Reverse Voltage (V):23, 43, 100 V
Type
SB120
SB140
SB1100
Chip
size(mm)
1,3x1,3
1,3x1,3
1,3x1,3
VR(V)
23 V
43 V
100 V
VF(V)@25 C IRM@VRMM
at If=1A
380mV
400mV
650mV
at 25 C
0,5mA
0,5mA
0,5mA
Note: Other voltages, Vf & Top Metal AL are available