GLC120 Datasheet, PDF (1/1 Pages) Gunter Seniconductor GmbH. – N Channel Power MOSFET FOR LOGIC DRIVER

Gunter Semiconductor GmbH
GLC120
N Channel Power MOSFET FOR LOGIC DRIVER
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dv/dt Rating
* 175℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* RDS(ON) rated at VGS = 5V
* Ease of parallel
Mechanical Data:
D7
Dimension 2.1mm x 2.92mm
Thickness:
400 µm
Metallization:
Top :
:
Al
Backside :
CrNiAg / Au
Suggested Bonding Conditions:
Die Mounting: Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire: 8 mil Al
Absolute Maximum Rating
@Ta=25℃
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction Temperature
Storage Temperature
Symbol
V(BR)DSS
RDS(ON)
ID@25℃
ID@100℃
Tj
TSTR
Limit
100
0.27
9.2
6.5
-55~175
-55~175
Unit
Test Conditions
V VGS=0V, ID=250µΑ
Ω
VGS=5V, ID=5.5Α
A
VGS= 5V
A
VGS= 5V
℃
℃
Target Device: IRL520
TO-220AB
PD
60
W
@Tc=25℃