GFCG40 Datasheet, PDF (1/1 Pages) Gunter Seniconductor GmbH. – N Channel High voltage, Power MOSFET

Gunter Semiconductor GmbH GFCG40
N Channel High voltage, Power MOSFET
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* High breakdown voltage
Mechanical Data:
D23
Dimension 5.64mm x 5.64mm
Thickness:
480 µm
Metallization:
Top :
:
Al
Backside :
CrNiAg / Au
Suggested Bonding Conditions:
Die Mounting: Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire: 10 mil Al
Absolute Maximum Rating
@Ta=25℃
Characteristics
Symbol Limit Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS 1000 V
Static Drain-to - Source On-resistance
RDS(ON) 3.5 Ω
Continuous Drain current ( in target packag ID@25℃ 4.3 A
Continuous Drain current ( in target packag ID@100℃ 2.7 A
Operation Junction
Tj
-55~150 ℃
Storage Temperature
TSTR -55~150 ℃
Test Conditions
VGS=0V, ID=250µΑ
VGS=10V, ID=2.6Α
VGS=10V
VGS=10V
Target Device: IRFG40
TO-247AC
Pd 150 W
@Tc=25℃