GFCF30 Datasheet, PDF (1/1 Pages) Gunter Seniconductor GmbH. – N Channel High Voltage, Power MOSFET

Gunter Semiconductor GmbH
N Channel High Voltage, Power MOSFET
GFCF30
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* High Breakdown Voltage
Mechanical Data:
D17
Dimension 4.42mm x 5.23mm
Thickness:
480 µm
Metallization:
Top :
:
Al
Backside :
CrNiAg / Au
Suggested Bonding Conditions:
Die Mounting: Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire: 10 mil Al
Absolute Maximum Rating
@Ta=25℃
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction
Storage Temperature
Symbol
V(BR)DSS
RDS(ON)
ID@25℃
ID@100℃
Tj
TSTR
Limit
900
4
3.6
2.3
-55~175
-55~175
Unit
Test Conditions
V VGS=0V, ID=250µΑ
Ω
VGS=10V, ID=2.2Α
A
VGS=10V
A
VGS=10V
℃
℃
Target Device: IRFBF30
TO-220AB
PD
125 W
@Tc=25℃