GFCE40 Datasheet, PDF (1/1 Pages) Gunter Seniconductor GmbH. – N Channel Power MOSFET , with high breakdown voltage

Gunter Semiconductor GmbH GFCE40
N Channel Power MOSFET , with high breakdown voltage
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 175℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* High breakdown voltage
Mechanical Data:
D23
Dimension 5.64mm x 5.64mm
Thickness:
480 µm
Metallization:
Top :
:
Al
Backside :
CrNiAg / Au
Suggested Bonding Conditions:
Die Mounting: Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire: 10 mil Al
Absolute Maximum Rating
@Ta=25℃
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction
Storage Temperature
Symbol
V(BR)DSS
RDS(ON)
ID@25℃
ID@100℃
Tj
TSTR
Limit
Unit
Test Conditions
800
V
VGS=0V, ID=250µΑ
2
Ω
VGS=10V, ID=3.2Α
5.4
A
VGS=10V
3.4
A
VGS=10V
-55~175 ℃
-55~175 ℃
Target Device: IRFPE40
TO-247AC
PD
150 W
@Tc=25℃