GFC9110 Datasheet, PDF (1/1 Pages) Gunter Seniconductor GmbH. – P Channel Power MOSFET

Gunter Semiconductor GmbH
P Channel Power MOSFET
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 175℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
GFC9110
Mechanical Data:
D33
Dimension 1.78mm x 2.41mm
Thickness:
400 µm
Metallization:
Top :
:
Al
Backside :
CrNiAg / Au
Suggested Bonding Conditions:
Die Mounting: Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire: 5 mil Al
Absolute Maximum Rating
@Ta=25℃
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction Temperatre
Storage Temperature
Symbol
-V(BR)DSS
RDS(ON)
--ID@25℃
--ID@100℃
Tj
TSTR
Limit
100
1.2
4
2.8
-55~175
-55~175
Unit
Test Conditions
V − VGS=0V, -ID=250µΑ
Ω − VGS=10V,- ID=2.4Α
A
- VGS=10V
A
- VGS=10V
℃
℃
Target Device: IRF9510
TO-220AB
PD
43
W
@Tc=25℃