GFC9014 Datasheet, PDF (1/1 Pages) Gunter Seniconductor GmbH. – P Channel Power MOSFET

Gunter Semiconductor GmbH
P Channel Power MOSFET
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
GFC9014
Mechanical Data:
D32
Dimension 1.92mm x 2.18mm
Thickness:
400 µm
Metallization:
Top :
:
Al
Backside :
CrNiAg / Au
Suggested Bonding Conditions:
Die Mounting: Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire: 5 mil Al
Absolute Maximum Rating
@Ta=25℃
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction Temperatre
Storage Temperature
Symbol
-V(BR)DSS
RDS(ON)
--ID@25℃
--ID@100℃
Tj
TSTR
Limit
60
0.5
5.1
3.2
-55~150
-55~150
Unit
Test Conditions
V − VGS=0V, -ID=250µΑ
Ω − VGS=10V, - ID=3.1A
A
- VGS=10V
A
- VGS=10V
℃
℃
Target Device: IRFR9014
TO-252AA
PD
25 W
@Tc=25℃