GFC460 Datasheet, PDF (1/1 Pages) Gunter Seniconductor GmbH. – N Channel Power MOSFET with high VDS

Gunter Semiconductor GmbH
N Channel Power MOSFET with high VDS
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
GFC460
Mechanical Data:
D31
Dimension 6.53mm x 9.15mm
Thickness:
400 µm
Metallization:
Top :
:
Al
Backside :
CrNiAg / Au
Suggested Bonding Conditions:
Die Mounting: Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire: 25mil Al
Absolute Maximum Rating
@Ta=25℃
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction
Storage Temperature
Symbol
Limit
Unit
V(BR)DSS
500
V
RDS(ON)
0.27
Ω
ID@25℃
20
A
ID@100℃
12
A
Tj
-55~150 ℃
TSTR
-55~150 ℃
Test Conditions
VGS=0V, ID=250µΑ
VGS=10V, ID=12Α
VGS=10V
VGS=10V
Target Device: IRFP460
TO-247AC
PD
280 W
@Tc=25℃