GFC430 Datasheet, PDF (1/1 Pages) Gunter Seniconductor GmbH. – N Channel Power MOSFET with low RDS(on)

Gunter Semiconductor GmbH
N Channel Power MOSFET with low RDS(on)
GFC430
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Low RDS(on)
Mechanical Data:
D15
Dimension 2.92mm x 4.45mm
Thickness:
400 µm
Metallization:
Top :
:
Al
Backside :
CrNiAg / Au
Suggested Bonding Conditions:
Die Mounting: Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire: 8 mil Al
Absolute Maximum Rating
@Ta=25℃
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction
Storage Temperature
Target Device: IRF830
TO-220AB
Symbol
V(BR)DSS
RDS(ON)
ID@25℃
ID@100℃
Tj
TSTR
Limit
500
1.5
5
3.2
-55~150
-55~150
Unit
Test Conditions
V VGS=0V, ID=250µΑ
Ω
VGS=10V, ID=3.0A
A
VGS=10V
A
VGS=10V
℃
℃
PD
74 W
@Tc=25℃