GFC130 Datasheet, PDF (1/1 Pages) Gunter Seniconductor GmbH. – N Channel Power MOSFET

Gunter Semiconductor GmbH
N Channel Power MOSFET
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 175℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
GFC130
Mechanical Data:
D13
Dimension 2.68mm x 3.75mm
Thickness:
400 µm
Metallization:
Top :
:
Al
Backside :
CrNiAg / Au
Suggested Bonding Conditions:
Die Mounting: Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire: 10 mil Al
Absolute Maximum Rating
@Ta=25℃
Characteristics
Symbol
Limit
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
100
V
Static Drain-to - Source On-resistance
RDS(ON)
0.16
Ω
Continuous Drain current ( in target package) ID@25℃
15
A
Continuous Drain current ( in target package) ID@100℃
11
A
Operation Junction
Tj
-55~175 ℃
Storage Temperature
TSTR
-55~175 ℃
Target Device: IRF530
TO-220AB
PD
63
W
Test Conditions
VGS=0V, ID=250µΑ
VGS=10V, ID=9Α
VGS=10V
VGS=10V
@Tc=25℃