GFC064 Datasheet, PDF (1/1 Pages) Gunter Seniconductor GmbH. – N Channel Power MOSFET with extremely low RDS(ON)

Gunter Semiconductor GmbH GFC064
N Channel Power MOSFET with extremely low RDS(ON)
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 175℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
*extremely low RDS(ON)
Mechanical Data:
D30
Dimension 6.53mm x 9.14mm
Thickness:
400 µm
Metallization:
Top :
:
Al
Backside :
CrNiAg / Au
Suggested Bonding Conditions:
Die Mounting: Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire: 25mil Al
Absolute Maximum Rating
@Ta=25℃
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction
Storage Temperature
Symbol
Limit
Unit
V(BR)DSS
60
V
RDS(ON) 0.009
Ω
ID@25℃
98
A
ID@100℃
69
A
Tj
-55~175 ℃
TSTR
-55~175 ℃
Test Conditions
VGS=0V, ID=250µΑ
VGS=10V, ID=59Α
VGS=10V
VGS=10V
Target Device: IRFP064
TO-247AC
PD
150 W
@Tc=25℃